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VOLUME 41 (1985) | ISSUE 3 | PAGE 100
Conductivity inversion and anomalously high hole mobility in a gapless semiconductor resulting from a uniaxial strain
A transition from an и-type to a /?-type conductivity due to a uniaxial strain has been detected in a gapless semiconductor. Formed due to a uniaxial strain, the lateral extrema of the valence band trap the holes with small effective masses, causing the hole mobility to be comparable to the electron mobility.