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VOLUME 41 (1985) | ISSUE 6 | PAGE 262
Activated magnetoconductivity in the region of fractional quantization of the Hall resistance in a silicon metal-insulator-semiconductor structure
That gap (ΔΕ) in the energy spectrum of interacting 2D electrons in a strong transverse magnetic field Η which corresponds to a filling factor ν — 2/3 has been determined from the temperature dependence of the diagonal component of the magnetoresistance tensor. The results reveal ΔΕ~4Η, in accordance with a theory which explains the fractional quantum Hall effect in terms of an electron-electron interaction.