Valley splitting in the electron spectrum of a Si inversion layer
Pudalov V. M., Semenchinskii S. G., Edel'man V. S.
Oscillations have been observed in the gate potential of a metal-oxide-semiconductor structure on the (001) surface ofp-type silicon upon a change in the magnetic field. These oscillations are associated with quantum oscillations of the chemical potential of an inversion layer. Measurements of the oscillations in fields corresponding to the condition Η = nscosh/re (v = 3, 5,...) yield a value for the valley splitting of levels: 4„ = 2.4 + 0.06Я (Η is in kOe, and Δν in K) at 20 kOeSHS 80 kOe and ns S 1012 cm"2.
Home
![](/ps/1445/article_22168_800_head.png "Oscillations have been observed in the gate potential of a metal-oxide-semiconductor structure on the (001) surface of<i>p-type </i>silicon upon a change in the magnetic field. These oscillations are associated with quantum oscillations of the chemical potential of an inversion layer. Measurements of the oscillations in fields corresponding to the condition <i>Η </i>= <i>n<sub>s</sub></i>cosh/re (v = 3, 5,...) yield a value for the valley splitting of levels: 4„ = 2.4 + 0.06Я <i>(Η </i>is in kOe, and <i>Δ<sub>ν</sub> </i>in K) at 20 <i>kOeSHS </i>80 kOe and <i>n<sub>s</sub> S </i>10<sup>12</sup> cm"<sup>2</sup>.")