Possible manifestation of spin fluctuations in the temperature behavior of resistivity of Sm1.85Ce0.15CuO4 thin films
S. Sergeenkov+*, A. J. C. Lanfredi+, F. M. Araujo-Moreira+
+ Departamento de Física e Engenharia Física, Grupo de Materiais e Dispositivos,
Centro Multidisciplinar para o Desenvolvimento de Materiais Cerâmicos,
Universidade Federal de São Carlos, São Carlos, SP, 13565-905 Brazil
* Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research,
141980 Dubna, Moscow reg., Russia
PACS: 74.25.Fy, 74.70.-b, 74.78.Bz
Abstract
A pronounced step-like (kink) behavior in the
temperature dependence of resistivity ρ (T) is observed in
the optimally-doped Sm1.85Ce0.15CuO4 thin films around
Tsf=87 K and attributed to manifestation of strong spin
fluctuations induced by Sm3+ moments with the energy
meV. In addition to fluctuation
induced contribution ρ sf(T) due to thermal broadening
effects (of the width ω sf), the experimental data are
found to be well fitted accounting for residual (zero-temperature)
ρ res, electron-phonon ρ e-ph(T)=AT and
electron-electron ρ e-e(T)=BT2 contributions. The best
fits produced ω p=2.1 meV,
τ 0-1=9.5•10-14 s-1, λ =1.2, and
EF=0.2 eV for estimates of the plasmon frequency, the impurity
scattering rate, electron-phonon coupling constant, and the Fermi energy,
respectively.