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VOLUME 29 (1979) | ISSUE 1 | PAGE 50
Characteristics of the temperature dependence of the radiative recombination intensity of GaSx Se1-x crystals
We studied the luminescence spectra of GaSxSe] _x (0<x <0.6) for Τ> 1.8K during Cu-vapor laser excitation (λ, = 5105 Α, λ2 = 5782 A). By varying the temperature from 4.2 to 1.8 К during excitation by the yellow laser line (λ2), we found an increase in the quantum radiation output for GaSo.iSeo-9 by a factor of 1000. It is assumed that during such excitation at 1.8 К an exciton is formed at an ionized defect with a very weakly associated hole, which is opened to the system because of thermal dissociation at Τ > 4.2 К.