Determination of the inter-band transition time in the valence band of gallium arsenide
Aronov A.G. , Mirlin D.N. , Nikitin L.P. , Reshina I.I. , Sapega V.F.
The lifetime r0 of holes in a spin-detached band in л-type gallium arsenide crystal (1.4 χ 1018 cm ~3) is directly determined from luminescence depolarization in a transverse magnetic field. The measured value (1.3 X10 ~13 sec) is determined by processes of transition between the spin-detached band and the band of light holes and is close to the calculated value of the relaxation time for such a transition with emission of an optical phonon.