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VOLUME 29 (1979) | ISSUE 5 | PAGE 268
Interaction of impurities and dislocations in a doped, plasticly-deformed n-type germanium
Discrete impurity conductivity in doped η-type Ge becomes anisotropic and vanishes in proportion to plastic deformation. This effect is interpreted as a manifestation of "congregation" of impurities at a dislocation in the process of deformation and "purging" of impurities from the basic crystal volume at a high dislocation density.