Interaction of impurities and dislocations in a doped, plasticly-deformed n-type germanium
Klyatskina I.V. , Kozhukh M.L. , Ryvkin S.M. , Trunov V.A., Shlimak I.S.
Discrete impurity conductivity in doped η-type Ge becomes anisotropic and vanishes in proportion to plastic deformation. This effect is interpreted as a manifestation of "congregation" of impurities at a dislocation in the process of deformation and "purging" of impurities from the basic crystal volume at a high dislocation density.