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VOLUME 29 (1979) | ISSUE 6 | PAGE 369
Exciton luminescence in the field of the Schottky barrier
A new effect—luminescence of the exciton reflection band in the Schottky-barrier field at the surface of a semiconductor—is discussed. The results of a calculation, in which the Stark energy and the probability of a tunnel dissociation of an exciton were plotted for the first time as functions of the coordinate, are given. The results of the electrical reflection GaAs are confirmed [Phys. Rev. Lett. 29, 1001 (1972)].