Polarization of thermal luminescence of uniaxially deformed GaAs crystals
Zakharchenya B. P., Mirlin D. N., Polyakov D. G., Sapega V. F.
The degree of polarization of recombination-induced radiation of uniaxially deformed GaAs crystals is found to decrease as the electron energy is increased. This effect is attributable to the increase of the relative contribution to the recombination of the conduction electrons with an orbital angular momentum of 2.