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VOLUME 29 (1979) | ISSUE 11 | PAGE 713
The optical charge exchange D0→ D- and the spin relaxation of photoelectrons in silicon
A strong decrease at TS6K has been found in the intensity of the electron paramagetic resonance (EPR) lines of phosphorus in quenched silicon samples during optical illumination, identified as the charge exchange of D°—>D ~. The spin relaxation (SR) rate for the conduction electrons (CE)rhas been determined in the samples investigated.