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VOLUME 21 (1975) | ISSUE 4 | PAGE 232
Observation of hysteresis-free switching and static negative differential resistance in films of amorphous semiconductors
It is shown experimentally that switching in films of amorphous semiconductors proceeds in two stages. Even though the switching proceeds along the load line in both cases, hysteresis is observed only after the second switching. The two switching stages are separated by a stable region of current, in which static negative differential resistance can occur.