Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 21-40
   Volumes 1-20
   Volumes 41-62
      Volume 62
      Volume 61
      Volume 60
      Volume 59
      Volume 58
      Volume 57
      Volume 56
      Volume 55
      Volume 54
      Volume 53
      Volume 52
      Volume 51
      Volume 50
      Volume 49
      Volume 48
      Volume 47
      Volume 46
      Volume 45
      Volume 44
      Volume 43
      Volume 42
      Volume 41
Search
VOLUME 41 (1985) | ISSUE 10 | PAGE 430
Excitons deep in the intrinsic absorption region of TlGaSe2 single crystals
A new absorption line has been discovered deep in the intrinsic absorption region, at EB = 2.3804 eV, at Τ — 1.8 К. This line is shown to be due to the formation of direct free excitons at point Г at the center of the Brillouin zone. The sharp change in the absorption coefficient atT= 105 K, accompanied by a vanishing of exciton absorption peak B, is attributed to structural phase transitions in the TlGaSe2 single crystals.