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VOLUME 38 (1983) | ISSUE 1 | PAGE 5
Recombination radiation of nonequilibrium electron-hole pairs associated with a surface charge layer in silicon
A new recombination radiation line, due to electron-hole pairs associated with a surface charge layer, arises in MOS (metal-oxide-semiconductor) structures in silicon in the presence of an electric field. The possibility for the existence of a two-dimensional electron-hole liquid in such a system is examined.