New method of determining the density of states on the surface of a semiconductor
Pospelov V.V., Suris R.A., Fetisov E.A. , Fuks B.N., Khafizov R.Z.
A new method is proposed for measuring small integral densities of surface states on the boundary between a semiconductor and a dielectric. Estimates show that this method makes it possible to measure, at room temperatures, state densities down to 104 cm-2, and at liquid nitrogen temperatures to 1-10 cm"2. The results of the experimental verification of the method on structures with state densities on the order of 1010 cm-2 are presented.
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![](/ps/1472/article_22455_800_head.png "A new method is proposed for measuring small integral densities of surface states on the boundary between a semiconductor and a dielectric. Estimates show that this method makes it possible to measure, at room temperatures, state densities down to 10<sup>4</sup> cm<sup>-2</sup>, and at liquid nitrogen temperatures to 1-10 cm"<sup>2</sup>. The results of the experimental verification of the method on structures with state densities on the order of 10<sup>10</sup> cm<sup>-2</sup> are presented.")