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VOLUME 21 (1975) | ISSUE 10 | PAGE 582
Absorption of ultrasound by electron-hole drops in a semiconductor
The interaction of ultrasound with electron-hole drops (EHD) in a semiconductor is considered. The sound absorption coefficient and the drift velocity of the EHD dragged by the sound are obtained, in the case of small drops, the temperature dependence of the absorption coefficient has a sharp maximum, and the EHD drift velocity reaches the speed of sound even at very small amplitudes of the sound wave.