Observation of optical orientation of holes in semiconductors
Zakharchenya B.P. , Zemskii V.I. , Ivchenko E.L., Mirlin D.N.
A luminescence band near 1.86 eV is observed in л-GaAS crystals and is due to electronic transitions from the conduction band to the split-off valence band. The presence of circularly polarized luminescence in the case of circularly polarized pumping offers evidence of optical spin orientation of the holes in the split-off band.