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VOLUME 21 (1975) | ISSUE 12 | PAGE 708
Influence of spin state of dislocations on the conductivity of silicon crystals
We have observed a decrease of the conductivity of silicon crystals following saturation of the dislocation EPR signal. At helium temperatures, the effect is proportional to T~ 015. The observed phenomenon is attributed to the dependence of the interaction of the free carriers with the dislocations on the spin state of the dislocation and of the carriers themselves.