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VOLUME 38 (1983) | ISSUE 2 | PAGE 73
Ultraquantum limit of the Hall conductivity of a two-dimensional electron gas on a silicon surface
Transport in a two-dimensional electron gas has been studied experimentally in the inversion channels of silicon metal-dielectric-semiconductor structures at temperatures 2-4.2 К in the ultraquantum limit in terms of the magnetic field. The results agree qualitatively with the interpretation that electrons localize at the lowest Landau level.