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VOLUME 38 (1983) | ISSUE 3 | PAGE 85
Phonon-electron interaction in silicon inversion layers
The phonon drag of charges in ρ and η inversion layers on silicon has been studied. The phonon-electron interaction has been found to intensify by a factor of several units at qc^lKpy probably because of the two-dimensional nature of the system. The strain energy in an inversion channel is determined.