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VOLUME 38 (1983) | ISSUE 3 | PAGE 103
Fluctuation model of a gap-free semiconductor
A model of a gap-free semiconductor without electrically active impurities (donors or acceptors) is proposed. Free electrons and weakly localized holes result from the Gaussian random potential. The Fermi level in this model depends weakly (logarithmically) on the pressure. The relationship between the electron mobility and the electron density is found.