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VOLUME 38 (1983) | ISSUE 5 | PAGE 249
Effect of the current on the plateau width in the quantum Hall effect
The effect of the current on the width (id ) of the plateaus with indices / = 2,4,6,8 in the quantum Hall effect has been studied in magnetic fields up to 13.7 Tin a silicon metal-oxide-semiconductor structure at 7b: 1.6 K. The width of the plateaus can be described as a function of the current by Δ ' = Δ jftl — I /I®). The role played by localization effects is discussed.