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VOLUME 38 (1983) | ISSUE 8 | PAGE 379
Nonequilibrium galvanomagnetic effects of quasi-2D electrons in p-InSb/i-GaAs heteroepitaxial structures
A negative photoconductivity which can be exploited to control the properties of the quasi-2D electron layer at an InSb/GaAs heterojunction has been discovered. Measurements carried out in electric fields at T— 1.0 К confirm the possibility of an energy relaxation of non-equilibrium electrons among 2D phonons.