Effect of radiation-induced lattice defects in silicon single crystals on the characteristic states of an intersticial muonium atom
Barsov S. G., Getalov A. L., Gordeev V. A., Evseev V. A., Konopleva R. F., Kruglov S. P., Kudinov V. I., Kuz'min L. A., Mikirtych'yants S. M., Minaichev E. V., Myasishcheva G. G., Obukhov Yu. V., Savel'ev G. I., Firsov V. G., Shcherbakov G. V.
It is observed experimentally that radiation defects affect normal and anomalous muonium in silicon differently. It is shown that the mobilities of these two states of muonium in the lattice of the specimen differ considerably.