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VOLUME 37 (1983) | ISSUE 4 | PAGE 173
Annealing of defects in plastically deformed 4He crystals
The activation energy for diffusion of dislocations in deformed 4He crystals, grown under a pressure of 31 atm, coincides with the activation energy of vacancies in specimens with the same density, as well as with the characteristic activation energy of 3He impurity atoms and charges in the region of thermally activated motion.