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VOLUME 37 (1983) | ISSUE 10 | PAGE 462
Effect of surface recombination on photoelectric emission from semiconductors with a negative electron affinity
The rate of surface recombination, S, on GaAs and InGaAsP with a negative electron affinity reaches ~ 106 cm/s and has a strong effect on the quantum yield of photoemission. Analysis shows that the large values of S are determined in part by the diffuse reflection of electrons from the surface.