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VOLUME 37 (1983) | ISSUE 10 | PAGE 474
Investigation of the form of the plateau in the quantum Hall resistance in a twodimensional layer of carriers in silicon
The form of the plateau in the Hall resistance is studied in two-dimensional layers of carriers in silicon metal-insulator-semiconductor structures for relative deviations δ — 10~6-10~2. It is found that the width of the plateau depends logarithmically on the deviation δ and linearly on the temperature.