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VOLUME 37 (1983) | ISSUE 11 | PAGE 527
Fine structure of the energy levels of an exciton bound on a boron atom in silicon
The fine structure of the phononless emission line of an exciton bound on a boron atom in silicon, with and without compression along the (111) axis, is investigated. An interpretation is proposed for this structure that takes into account the valley-orbital splitting, j-j pairing of holes, and electron-hole exchange interaction.