Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 41-62
   Volumes 1-20
   Volumes 21-40
      Volume 40
      Volume 39
      Volume 38
      Volume 37
      Volume 36
      Volume 35
      Volume 34
      Volume 33
      Volume 32
      Volume 31
      Volume 30
      Volume 29
      Volume 28
      Volume 27
      Volume 26
      Volume 25
      Volume 24
      Volume 23
      Volume 22
      Volume 21
Search
VOLUME 33 (1981) | ISSUE 2 | PAGE 115
Surface states in a gapless semiconductor
It is shown that gapless α-Sn and HgTe semiconductors have specific surface states, which are a superposition of the electron states in the valence band and in the conduction band. The effective mass, which determines the motion along the surface in these states, depends on the mass ratio of the free electron and the free hole.