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VOLUME 33 (1981) | ISSUE 6 | PAGE 346
Accumulation of electrons and their relaxation due to the photoelectric effect in Pb0.78Sn0.22Te
The accumulation of electrons excited by light was investigated in PB0 78Sn0 22Te and their relaxation times were determined. Basic systematic features of the intrinsic photoelectric effect are manifested in their simplest form in the investigated semiconductor.