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VOLUME 33 (1981) | ISSUE 7 | PAGE 377
Density of states in MDS structures
The density of states of a two-dimensional plasma in a random surface potential of the semiconductor component of a metal-dielectric-semiconductor (MDS) structure is investigated. The interaction of electrons, in which the reflection forces are taken into account, gives rise to a strong dependence of the density of states on the thickness of the dielectric layer.