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VOLUME 33 (1981) | ISSUE 9 | PAGE 448
Suppression of the Staebler-Wronski effect in hydrogenated amorphous silicon by ion implantation of gallium and arsenic
The photoinduced changes in the dark conductivity and the photoconductivity (the Staebler-Wronski effect) have been studied in hydrogenated amorphous silicon after implantation of gallium and arsenic ions. The results show that the implantation substantially reduces the effect of light on the photoelectric characteristics of a -Si:H.