Photon drag of electrons and holes in interband transitions in semiconductors and the resonant-recoil effect
Al'perovich V. L., Belinicher V. I., Novikov V. N., Terekhov A. S.
Photon drag has been detected experimentally in interband transitions in gallium arsenide. A theoretical description is offered. Peaks are caused in the photocurrent by a recoil effect as optical phonons are emitted by electrons.