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VOLUME 33 (1981) | ISSUE 12 | PAGE 643
Self-mode-locking produced when a mirror which undergoes a metal-semiconductor phase transition is used as the modulator
A self-mode-locking regime obtained as a result of metal-semiconductor phase transition in a vanadium oxide film is reported. The initiation and relaxation times are given for the phase transition in the oxide film produced as a result of excitation by a short laser flash.