Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 41-62
   Volumes 1-20
   Volumes 21-40
      Volume 40
      Volume 39
      Volume 38
      Volume 37
      Volume 36
      Volume 35
      Volume 34
      Volume 33
      Volume 32
      Volume 31
      Volume 30
      Volume 29
      Volume 28
      Volume 27
      Volume 26
      Volume 25
      Volume 24
      Volume 23
      Volume 22
      Volume 21
Search
VOLUME 34 (1981) | ISSUE 1 | PAGE 28
Electron-electron exchange in many-valley semiconductors and the fine structure of many-exciton complexes in silicon
The fine structure of the levels of an exciton bound by a neutral donor (ND) in silicon, which was detected recently in Ref. 1, is attributed to the exchange interaction between the electrons of different valleys and to the electron-hole exchange. The energies of the electron-electron (e~e) exchange and of the electron-hole (e -h) exchange are estimated.