Electron-electron exchange in many-valley semiconductors and the fine structure of many-exciton complexes in silicon
Pikus G. E., Averkiev N. S.
The fine structure of the levels of an exciton bound by a neutral donor (ND) in silicon, which was detected recently in Ref. 1, is attributed to the exchange interaction between the electrons of different valleys and to the electron-hole exchange. The energies of the electron-electron (e~e) exchange and of the electron-hole (e -h) exchange are estimated.