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VOLUME 34 (1981) | ISSUE 4 | PAGE 204
Anisotropy of the heating of photoexcited electrons in CdS single crystals
The temperature of the electrons heated during photoexcitation has been observed to depend on the orientation of the polarization plane of the exciting light with respect to the с optic axis in CdS single crystals. This is the first observation of such a dependence. The effect is shown to result from a localization of hot charge carriers at the depth to which the exciting light penetrates into the crystal. The time spent by a hot carrier in this layer has been determined: fL = 0.81 ps and f ц = 0.58 ps.