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VOLUME 34 (1981) | ISSUE 6 | PAGE 367
The effect of quantum corrections on the resistance of thin bismuth films
A logarithmic increase of the resistance of thin Bi films resulting from a decrease in temperature, as well as a logarithmic dependence of the magnetoresistance on the magnetic field have been observed. The obtained results are in agreement with theory, in which the quantum corrections for the conductivity, with allowance for the interelectronic interaction, are examined.