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VOLUME 34 (1981) | ISSUE 8 | PAGE 430
Scale time for interband Auger recombination involving a spin-orbit-split valence band in p-type GaSb crystals
The efficiency of interband Auger recombination of electrons and holes involving a spin-orbit-split valence band has been determined for the first time in a direct-band, ρ -type semiconductor (for the particular case of GaSb crystals).