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VOLUME 22 (1975) | ISSUE 11 | PAGE 573
Interaction of A+(D-) centers in semiconductors with charged and neutral impurities
An increase in the energy of the photodetachment of holes from A + centers with increasing acceptor concentration NA was observed in p-Si at NA = 1015-1017 cm-3. The effect is attributed to the influence of the field of the negatively charged acceptors on the Α + centers and to hopping of the holes over the neutral impurities.