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VOLUME 17 (1973) | ISSUE 5 | PAGE 237
Resonant Absorption by Electrons Localized on Donor Pairs in Compensated n-InSb
A model of the molecular hydrogen ion Hi is proposed for an analysis of the energy levels of the localized electrons in compensated semiconductors. The measured absorption coefficients of n-InSb at 1.6 4.2°K are explained within the framework of the proposed model.