Modulation of Light by Nonequilibrium Optical Phonons in n-GaAs
Vorob'ev L.E. , Osokin F.I. , Stafeev V.P., Shturbin A.V.
Modulation of light near the direct-transition edge was observed in strong electric fields in doped n-GaAs with η = 2Λχ1016 cm"3 at T0 = TT°K. The experimental results are compared with a calculation based on the model of direct exciton transitions with participation of nonequilibrium LO phonons. It is shown that within the framework of the employed model it is possible to obtain qualitative and quantitative agreement between theory and experiment if the lifetime of the long-wave LO phonons is assumed to be 0.8><10"12 sec.
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![](/ps/1544/article_23849_800_head.png "Modulation of light near the direct-transition edge was observed in strong electric fields in doped n-GaAs with η = 2Λχ10<sup>16</sup> cm"<sup>3</sup> at T<sub>0</sub> <sup>=</sup> TT°K. The experimental results are compared with a calculation based on the model of direct exciton transitions with participation of nonequilibrium LO phonons. It is shown that within the framework of the employed model it is possible to obtain qualitative and quantitative agreement between theory and experiment if the lifetime of the long-wave LO phonons is assumed to be 0.8><10"<sup>12</sup> sec.")