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VOLUME 27 (1978) | ISSUE 2 | PAGE 81
Experimental observation of oscillations of electronic ultrasound absorption in a semiconductor placed in an alternating field
Oscillations and reversal of the sign of the coefficient of electronic absorption of ultrasound of frequency 0.5 and 0.7 GHz was observed experimentally in n-InSb crystals placed in an alternating electric field of frequency 1.8 GHz. The experiments were performed at a temperature 77 К in magnetic fields up to 6 kOe.