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VOLUME 27 (1978) | ISSUE 11 | PAGE 652
Influence of size-effect quantization of energy levels in semiconductors on the photoelectron emission
We investigate the photoelectron energy distribution for GaAs photocathodes with negative electron affinity. It is concluded that the photoelectrons emerge to the vacuum from two-dimensional surface subbands that arise in the region of the bending of the semiconductor bands as a result of size-effect quantization.