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VOLUME 28 (1978) | ISSUE 2 | PAGE 72
Electron-hole drops in ZnSe single crystals
Edge luminescence is investigated in strongly excited ZnSe single crystals. It is established that at Τ = 4.2 К the luminescence is due to recombination radiation of electron-hole drops (EHD). Comparison of the theoretical calculations with the experimental data yielded the carrier density in the drop, n0 = 1018 cm-3, and the EHD binding energy, 4-7 meV.