Quantum oscillations of the intensity of recombination radiation of electron-hole drops in silicon
Dite A.F., Lysenko V.G., Dokhnygin V.D., Timofeev V.B.
We investigate recombination radiation of silicon single crystals at high density of the non-equilibrium carriers produced by laser pumping in strong magnetic fields at Τ = 1.4°K. Quantum oscillations of the intensity were observed at the "blue" edge of the band connected with carrier recombination in the electron-hole drop. The carrier density in the drop is determined. The heating of the carriers and excitons is studied.
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![](/ps/1561/article_23895_800_head.png "We investigate recombination radiation of silicon single crystals at high density of the non-equilibrium carriers produced by laser pumping in strong magnetic fields at Τ = 1.4°K. Quantum oscillations of the intensity were observed at the "blue" edge of the band connected with carrier recombination in the electron-hole drop. The carrier density in the drop is determined. The heating of the carriers and excitons is studied.")