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VOLUME 18 (1973) | ISSUE 10 | PAGE 616
Nonlinear effects in n-InSb at 770K in the shortwave part of the millimeter band
Experimental studies of nonlinear effects in the millimeter and submillimeter bands is of great interest for the diagnostics of nonlinear properties of semiconductors, properties connected with the interaband motion of the carriers. In particular, by investigating the power-law dependence of the current density on the electric field intensity, j(Ε) = Ιη_ιαηΕη, we can obtain information on the nonlinearity mechanisms that act in the semiconductor and on the carrier dis tribution function.