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VOLUME 14 (1971) | ISSUE 1 | PAGE 9
Photoconductivity of Germanium in a High-frequency Electric Field
The use of a high-frequency electric field for the study of the photoconductivity of semiconductors has a number of advantages over other methods, since it combines the possibility of obtaining sufficiently strong fields with satisfaction of the requirement that the drift length of the non-equilibrium carriers be much smaller than the length of the sample. In this case, however when the non-equilibrium carriers are excited by intense optical generation, non-trivial phenomena arise in the investigated germanium samples, and the present paper is devoted to their description.