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VOLUME 77 (2003) | ISSUE 3 | PAGE 162
Unconventional magnetoresistance in long InSb nanowires
PACS: 73.23.-b, 73.63.-b
Abstract
Magnetoresistance in long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1-1 mm) is studied over temperature range 2.3-300 K. At zero magnetic field the electric conduction G and the current-voltage characteristics of such wires obey the power laws G\propto T^\alpha, I\propto V^\beta, expected for one-dimensional electron systems. The effect of magnetic field corresponds to a 20% growth of the exponents α, β at H=10 T. The observed magnetoresistance is caused by the magnetic-field-induced breaking of the spin-charge separation and represents a novel mechanism of magnetoresistance.