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VOLUME 19 (1974) | ISSUE 3 | PAGE 165
Electric field mechanism of relaxation of paramagnetic centers interacting with carriers
A new mechanism is proposed for spin relaxation of paramagnetic impurity centers in semiconductors. This mechanism is due to the possibility of electric-dipole excitation of the spin transitions of the impurities located in sites of a crystal without an inversion center. A comparison is made with the known mechanisms of spin relaxation due to interaction of the paramagnetic centers with the carriers.