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VOLUME 19 (1974) | ISSUE 6 | PAGE 358
Thermal pinching of current in long silicon diodes having a single-valued current-voltage characteristic
We observed experimentally thermal instability of the current in long silicon diodes with positive differential resistance. It is shown that this effect is due to the difference between the spatial dispersions of the intrinsic and the nonequilibrium conductivities in the weakly doped region of the diode.