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VOLUME 19 (1974) | ISSUE 7 | PAGE 461
Observation of sample-size-dependent transverse electric field in bismuth at low temperatures
We measured the dependence of the transverse electric field £χοη the temperature and dimensions of the bismuth sample. The observed increase of EJE^ with decreasing temperature at Τ < 7°K and with decreasing sample thickness can be qualitatively explained within the framework of the theory of the diffusion size effect.